OPTICAL BAND-GAP OF THE TERNARY SEMICONDUCTOR SI1-X-YGEXCY

被引：154

作者：

SOREF, RA

机构：

[1] USAF Rome Laboratory, RL/ERO, Hanscom Air Force Base

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.349403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystal alloys of diamond with Si and Ge are investigated theoretically. An indirect band gap GAMMA-upsilon-25' --> DELTA-1c is found for the new semiconductor Si1-x-yGe(x)C(y) over most compositions x and y, with an indirect GAMMA-upsilon-25' --> L(c)1 gap found for the remaining compositions. The estimated band gaps span the 0.62-5.5-eV-range. Predictions are made for band gap versus lattice parameter in the new alloy semiconductors Si1-xC(x) and Ge1-xC(x).

引用

页码：2470 / 2472

页数：3

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