ANNEALING AND CRYSTALLIZATION PROCESSES IN TETRAHEDRALLY BONDED BINARY AMORPHOUS-SEMICONDUCTORS

被引：84

作者：

MORIMOTO, A

KATAOKA, T

KUMEDA, M

SHIMIZU, T

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 50卷 / 04期

关键词：

D O I：

10.1080/13642818408238875

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：517 / 537

页数：21

共 29 条

[1] RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON
BERMEJO, D
CARDONA, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 405 - 419
[2] RAMAN-SCATTERING IN GE-SI ALLOYS
BRYA, WJ
[J]. SOLID STATE COMMUNICATIONS, 1973, 12 (04) : 253 - 257
[3] INFRARED-ABSORPTION OF HYDROGENATED AMORPHOUS SI-C AND GE-C FILMS
CATHERINE, Y
TURBAN, G
[J]. THIN SOLID FILMS, 1980, 70 (01) : 101 - 104
[4] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS
DISMUKES, JP
PAFF, RJ
EKSTROM, L
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &
[5] DIFFICULT CARBONACEOUS MATERIALS AND THEIR INFRARED AND RAMAN SPECTRA - REASSIGNMENTS FOR COAL SPECTRA
FRIEDEL, RA
CARLSON, GL
[J]. FUEL, 1972, 51 (03) : 194 - &
[6] X-RAY PHOTOELECTRON-SPECTROSCOPY AND RAMAN-SPECTROSCOPY INVESTIGATIONS OF AMORPHOUS SIXC1-X(H) COATINGS OBTAINED BY CHEMICAL VAPOR-DEPOSITION FROM THERMALLY LABILE ORGANO-SILICON COMPOUNDS
GERAULT, JP
MORANCHO, R
CONSTANT, G
MAZEROLLES, P
EHRHARDT, JJ
ALNOT, M
[J]. THIN SOLID FILMS, 1983, 101 (01) : 83 - 96
[7] EFFECTS OF ANNEALING ON GAP STATES IN AMORPHOUS SI FILMS
HASEGAWA, S
YAZAKI, S
SHIMIZU, T
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (07) : 407 - 410
[8] RAMAN-SPECTRA OF AMORPHOUS SIC
INOUE, Y
NAKASHIMA, S
MITSUISHI, A
TABATA, S
TSUBOI, S
[J]. SOLID STATE COMMUNICATIONS, 1983, 48 (12) : 1071 - 1075
[9] RAMAN-SCATTERING IN HYDROGENATED AMORPHOUS-SILICON UNDER HIGH-PRESSURE
ISHIDATE, T
INOUE, K
TSUJI, K
MINOMURA, S
[J]. SOLID STATE COMMUNICATIONS, 1982, 42 (03) : 197 - 200
[10] CALCULATION OF PHONON DENSITY OF STATES FOR AMORPHOUS SI
ISHII, N
KUMEDA, M
SHIMIZU, T
[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (04) : 367 - 370

← 1 2 3 →