HEAVY-ION DAMAGE IN SILICON AND GERMANIUM

被引：57

作者：

HOWE, LM

RAINVILLE, MH

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80015-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：61 / 66

页数：6

共 23 条

[1] POLYATOMIC-ION IMPLANTATION DAMAGE IN SILICON [J].

DAVIES, JA ;

FOTI, G ;

HOWE, LM ;

MITCHELL, JB ;

WINTERBON, KB .

PHYSICAL REVIEW LETTERS, 1975, 34 (23) :1441-1444

[2] FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY [J].

HOWE, LM ;

RAINVILLE, MH .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :143-151

[3] COLLISION CASCADES IN SILICON [J].

HOWE, LM ;

RAINVILLE, MH ;

HAUGEN, HK ;

THOMPSON, DA .

NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3) :419-425

[4]

HOWE LM, 1983, P MIC SOC CANADA, V10, P64

[5] ORIENTATIONAL DEPENDENCE OF DAMAGE IN TE+ IMPLANTED GERMANIUM SINGLE-CRYSTALS [J].

KALITZOVA, M ;

FOTI, G ;

BERTOLOTTI, M ;

MARINELLI, M ;

VITALI, G ;

ZAMMIT, U .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 69 (3-4) :191-198

[6] RADIATION DEFECTS IN TE-IMPLANTED GERMANIUM - ELECTRON-MICROSCOPY AND COMPUTER-SIMULATION STUDIES [J].

KALITZOVA, MG ;

KARPUZOV, DS ;

PASHOV, NK .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 51 (03) :373-382

[7]

MITCHELL JB, 1975, ION IMPLANTATION SEM, P493

[8]

Narayan J., 1984, Materials Letters, V2, P211, DOI 10.1016/0167-577X(84)90026-0

[9] CONVERSION OF CRYSTALLINE GERMANIUM TO AMORPHOUS GERMANIUM BY ION BOMBARDMENT [J].

PARSONS, JR .

PHILOSOPHICAL MAGAZINE, 1965, 12 (120) :1159-&

[10] OBSERVATION OF CRYSTAL LATTICE PLANES IN NEUTRON AND ION BOMBARDED GE [J].

PARSONS, JR ;

HOELKE, CW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :37-&

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