ION-BOMBARDMENT EFFECTS IN PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS - A COMPARATIVE-STUDY OF DC AND RF DISCHARGES

被引：34

作者：

CATHERINE, Y ^{[1
]}

ZAMOUCHE, A ^{[1
]}

BULLOT, J ^{[1
]}

GAUTHIER, M ^{[1
]}

机构：

[1] UNIV PARIS SUD,CNRS,MAT AMORPHES LAB 75,F-91400 ORSAY,FRANCE

来源：

关键词：

D O I：

10.1016/0040-6090(83)90134-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：145 / 158

页数：14

共 39 条

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