FORMATION OF PLANAR N+ POCKETS IN GAAS FOR MIXER DIODE FABRICATION

被引：6

作者：

GRIFFIN, JA ^{[1
]}

SPENCER, MG ^{[1
]}

HARRIS, GL ^{[1
]}

COMAS, J ^{[1
]}

机构：

[1] USN,RES LAB,MOLEC BEAM EPITAXY SECT 3 5,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1096 / 1099

页数：4

共 7 条

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[3] NOVEL TECHNOLOGY FOR FABRICATION OF BEAM-LEADED GAAS SCHOTTKY-BARRIER MIXER DIODES [J].

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[5] SUBMILLIMETER HETERODYNE-DETECTION WITH PLANAR GAAS SCHOTTKY-BARRIER DIODES [J].

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[6]

STAREEV GD, 1977, SOLID STATE ELECTRON, V20, P161, DOI 10.1016/0038-1101(77)90067-3

[7] MONOLITHIC INTEGRATED SCHOTTKY DIODE FOR MICROWAVE MIXERS [J].

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