STRUCTURAL CHARACTERIZATION OF ENCAPSULATED AU/ZN/AU OHMIC CONTACTS TO P-TYPE GAAS

被引：6

作者：

LIN, XW ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

WASHBURN, J ^{[1
]}

PIOTROWSKA, A ^{[1
]}

KAMINSKA, E ^{[1
]}

机构：

[1] INST ELECTR TECHNOL,PL-02668 WARSAW,POLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 01期

关键词：

D O I：

10.1116/1.586724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional transmission electron microscopy and high-resolution electron microscopy were used to study the cross sections of Au/Zn/Au ohmic contacts to a [001]-oriented p-type GaAs substrate. The metal contacts fabricated by sequential vapor deposition were capped with an Al2O3 thin film to form a closed system when subjected to a 420-degrees-C anneal for 3 min. For an as-deposited specimen, the Zn layer was found to react with the two adjacent Au layers and the reaction products were three room-temperature phases of Au3Zn. One of these phases is identified for the first time and its structure is characterized. Upon annealing, these phases remained stable and no interfacial reaction between the metal contact and GaAs was observed, as opposed to an uncapped contact. The interface between the annealed contact and GaAs exhibited the same degree of uniformity and planarity as that of the as-deposited specimen. This study demonstrates that the formation of metallic protrusions into GaAs, as commonly found in an uncapped contact, is not necessary for the transition from rectifying to ohmic behavior of the contact.

引用

页码：44 / 50

页数：7

共 28 条

[21]

SHENG TT, 1988, ANAL TECHNIQUES THIN, P251

[22]

VIDIMARI F, 1979, ELECTRON LETT, V15, P675

[23]

VILLARS P, 1985, PEARSONS HDB CRYSTAL, V2, P1243

[24] THE INTERACTION OF GOLD WITH GALLIUM-ARSENIDE [J].