Thermal characterization of vertical multichip modules MCM-V

被引：5

作者：

Cahill, C

Compagno, A

ODonovan, J

Slattery, O

OMathuna, SC

Barrett, J

Serthelon, I

Val, C

Tigneres, JP

Stern, J

Ivey, P

Masgrangeas, M

CoelloVera, A

机构：

[1] VIS COMP, DUBLIN, IRELAND

[2] POWER ELECTR IRELAND, CORK, IRELAND

[3] SEXTANT AVON, ST MEDARD, FRANCE

[4] THOMSON CSF, COLOMBES, FRANCE

[5] THOMSON CSF, TOULOUSE, FRANCE

[6] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD S1 3JD, S YORKSHIRE, ENGLAND

[7] ALCATEL ESPACE, TOULOUSE, FRANCE

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A | 1995年 / 18卷 / 04期

关键词：

thermal; MCM; memory cube; thermal measurement; thermal simulation; 3-D MCM;

D O I：

10.1109/95.477462

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes the thermal characterization of a vertical multichip module (MCM-V) technology. The MCMV technology encloses a stack of IC's in a three dimensional cube of plastic molding compound, with the inter-chip electrical connections made on the outside faces of the cube, Thermal measurements were carried out on two different sized modules containing eight specially designed package evaluation test chips. Steady state and transient thermal results are presented. Simulation results are shown for two applications manufactured using the MCM-V technology; a 2 W, 16 chip 256 MBit DRAM module and a 3 W, 9 chip image processing system.

引用

页码：765 / 772

页数：8