CLUSTER-BETHE-LATTICE APPROACH TO THE ELECTRONIC-STRUCTURE OF A TWOFOLD COORDINATED SILICON ATOM AS A NEW INTRINSIC DEFECT IN V-SIO2

被引:5
作者
BETHKENHAGEN, V
HUBNER, K
机构
[1] Wilhelm-Pieck-Univ Rostock, Sektion, Physik, Rostock, East Ger, Wilhelm-Pieck-Univ Rostock, Sektion Physik, Rostock, East Ger
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1984年 / 126卷 / 01期
关键词
D O I
10.1002/pssb.2221260165
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
7
引用
收藏
页码:K71 / K76
页数:6
相关论文
共 7 条
[1]  
BETHKENHAGEN V, 1984, PHYS STATUS SOLIDI B, V125, pK79, DOI 10.1002/pssb.2221250167
[2]   ELECTRONIC-ENERGY STRUCTURE OF VACANCY AND DIVACANCY IN SIO2 [J].
CIRACI, S ;
ERKOC, S .
SOLID STATE COMMUNICATIONS, 1981, 40 (08) :801-803
[3]   INTRINSIC-DEFECT PHOTO-LUMINESCENCE IN AMORPHOUS SIO2 [J].
GEE, CM ;
KASTNER, M .
PHYSICAL REVIEW LETTERS, 1979, 42 (26) :1765-1769
[4]   THEORY OF FLUCTUATIONS AND LOCALIZED STATES IN AMORPHOUS TETRAHEDRALLY BONDED SOLIDS [J].
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1977, 16 (06) :2764-2774
[5]   CORRELATIONS OF 4.77-4.28-EV LUMINESCENCE BAND IN SILICON DIOXIDE WITH OXYGEN VACANCY [J].
JONES, CE ;
EMBREE, D .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5365-5371
[6]   THEORY OF DEFECTS IN VITREOUS SILICON DIOXIDE [J].
OREILLY, EP ;
ROBERTSON, J .
PHYSICAL REVIEW B, 1983, 27 (06) :3780-3795
[7]   A NEW INTRINSIC DEFECT IN AMORPHOUS SIO2 - TWOFOLD COORDINATED SILICON [J].
SKUJA, LN ;
STRELETSKY, AN ;
PAKOVICH, AB .
SOLID STATE COMMUNICATIONS, 1984, 50 (12) :1069-1072