CORRELATIONS OF 4.77-4.28-EV LUMINESCENCE BAND IN SILICON DIOXIDE WITH OXYGEN VACANCY

被引:97
作者
JONES, CE [1 ]
EMBREE, D [1 ]
机构
[1] LEHIGH UNIV,BETHLEHEM,PA 18015
关键词
D O I
10.1063/1.322562
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5365 / 5371
页数:7
相关论文
共 17 条
[1]   OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J].
FEIGL, FJ ;
FOWLER, WB ;
YIP, KL .
SOLID STATE COMMUNICATIONS, 1974, 14 (03) :225-229
[2]   CONTROL OF FIXED CHARGE AT SI-SIO2 INTERFACE BY OXIDATION-REDUCTION TREATMENTS [J].
FOWKES, FM ;
HESS, DW .
APPLIED PHYSICS LETTERS, 1973, 22 (08) :377-379
[3]  
HESS DW, 1973, THESIS LEHIGH U
[4]  
HIELSCHER FH, COMMUNICATION
[5]  
LELL E, 1966, PROGRESS CERAMICS, V4, P1
[6]  
MITCHELL EWJ, 1957, PHILOS MAG, V2, P941
[7]   STUDY OF SIO LAYERS ON SI USING CATHODOLUMINESCENCE SPECTRA [J].
MITCHELL, JP ;
DENURE, DG .
SOLID-STATE ELECTRONICS, 1973, 16 (07) :825-839
[8]   EFFECTS OF STOICHIOMETRY ON RADIATION RESPONSE OF SIO2 [J].
SIGEL, GH ;
FRIEBELE, EJ ;
GINTHER, RJ ;
GRISCOM, DL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :56-61
[9]  
SIGEL GH, 1974, NRL2934 MEM REP, P15
[10]  
SIGEL GH, 1974, NRL2934 MEM REP, P53