NMOS PROTECTION CIRCUITRY

被引：42

作者：

ROUNTREE, RN

HUTCHINS, CL

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1985.22047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：910 / 917

页数：8

共 8 条

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[2] ELECTRO-THERMOMIGRATION IN AL-SI, AU-SI INTERDIGITIZED TEST STRUCTURES
CHRISTOU, A
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 2975 - 2979
[3] DECHIARO LF, 1981, P IRPS JUN, P223
[4] DUVVURY C, 1983, EOS ESD S P, V5, P181
[5] KUSNEZOV N, 1981, ELECTRIC OVERSTRESS, V3, P132
[6] ORVIS WJ, 1983, ELECTRIC OVERSTRESS, V5, P108
[7] SECOND BREAKDOWN AND DAMAGE IN JUNCTION DEVICES
SMITH, WB
PONTIUS, DH
BUDENSTEIN, PP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 731 - 744
[8] DETERMINATION OF THRESHOLD FAILURE LEVELS OF SEMICONDUCTOR DIODES AND TRANSISTORS DUE TO PULSE VOLTAGES
WUNSCH, DC
BELL, RR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) : 244 - +