SECOND BREAKDOWN AND DAMAGE IN JUNCTION DEVICES

被引：46

作者：

SMITH, WB ^{[1
]}

PONTIUS, DH ^{[1
]}

BUDENSTEIN, PP ^{[1
]}

机构：

[1] AUBURN UNIV, AUBURN, AL 36830 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 08期

关键词：

D O I：

10.1109/T-ED.1973.17735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：731 / 744

页数：14

共 32 条

[1]

BUDENSTEIN PP, 1970, RGTR7019 US ARMY MIS

[2] THERMAL INSTABILITY IN VERY SMALL P-N JUNCTIONS [J].

CHIANG, KL ;

LAURITZEN, PO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) :782-+

[3] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[4] EMISSION OF VISIBLE RADIATION FROM EXTENDED PLASMAS IN SILICON DIODES DURING SECOND BREAKDOWN [J].

DUMIN, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :479-+

[5] MESOPLASMA BREAKDOWN IN SILICON JUNCTIONS [J].

ENGLISH, AC ;

POWER, HM .

PROCEEDINGS OF THE IEEE, 1963, 51 (03) :500-+

[6] PHYSICAL INVESTIGATION OF MESOPLASMA IN SILICON [J].

ENGLISH, AC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :662-+

[7] INPUT POWER INDUCED THERMAL EFFECTS RELATED TO TRANSITION TIME BETWEEN AVALANCHE AND SECOND BREAKDOWN IN P-N SILICON JUNCTIONS [J].

FERRY, DK ;

DOUGAL, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :627-+

[8] CURRENT MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS [J].

GRUTCHFIELD, HB ;

MOUTOUX, TJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :743-+

[9]

HOLDER JD, 1971, RGTR711 US ARMY MISS

[10] AVALANCHE INJECTION AND SECOND BREAKDOWN IN TRANSISTORS [J].

HOWER, PL ;

REDDI, VGK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :320-+

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