INPUT POWER INDUCED THERMAL EFFECTS RELATED TO TRANSITION TIME BETWEEN AVALANCHE AND SECOND BREAKDOWN IN P-N SILICON JUNCTIONS

被引：11

作者：

FERRY, DK

DOUGAL, AA

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：627 / +

页数：1

共 8 条

[1] THERMAL PINCHING IN ELECTRON-HOLE PLASMA .2. [J].

ANCKERJOHNSON, B ;

DRUMMOND, JE .

PHYSICAL REVIEW, 1963, 132 (06) :2372-&

[2] THERMAL PINCHING IN ELECTRON-HOLE PLASMA [J].

ANCKERJOHNSON, B ;

DRUMMOND, JE .

PHYSICAL REVIEW, 1963, 131 (05) :1961-&

[3]

GORDEEV GV, 1959, SOV PHYS-SOL STATE, V1, P772

[4] ZUR STOSSIONISATION IN SILICIUM UND GERMANIUM [J].

GROSCHWITZ, E .

ZEITSCHRIFT FUR PHYSIK, 1956, 143 (05) :632-636

[5] FINE STRUCTURE + ELECTROMAGNETIC RADIATION IN 2ND BREAKDOWN [J].

PORTNOY, WM ;

GAMBLE, FR .

REICH, B ;

HAKIM, EB .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (06) :624-&

[7]

SCARLETT RM, 1963, IEEE INT CONV REC 3, P3

[8]

Schafft H., 1962, IRE T ELECTRON DEV, V9, P129