ZUR STOSSIONISATION IN SILICIUM UND GERMANIUM

被引:8
作者
GROSCHWITZ, E
机构
来源
ZEITSCHRIFT FUR PHYSIK | 1956年 / 143卷 / 05期
关键词
D O I
10.1007/BF01333571
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:632 / 636
页数:5
相关论文
共 7 条
[1]  
CHAPMAN S, 1953, MATH THEORY NONUNIFO, P350
[2]  
Davydov B. I., 1935, PHYS Z SOWJETUNION, V8, P59
[3]  
DRUYVESTEYN, 1930, PHYSICA, V10, P61
[4]   ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].
MCKAY, KG ;
MCAFEE, KB .
PHYSICAL REVIEW, 1953, 91 (05) :1079-1084
[5]   MOBILITIES OF ELECTRONS IN HIGH ELECTRIC FIELDS [J].
RYDER, EJ ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (01) :139-140
[6]   HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04) :990-1034
[7]   THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].
WOLFF, PA .
PHYSICAL REVIEW, 1954, 95 (06) :1415-1420