THERMAL INSTABILITY IN VERY SMALL P-N JUNCTIONS

[1] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[2] EMISSION OF VISIBLE RADIATION FROM EXTENDED PLASMAS IN SILICON DIODES DURING SECOND BREAKDOWN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 479 - +

[3] MESOPLASMA BREAKDOWN IN SILICON JUNCTIONS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 500 - +

[4] PHYSICAL INVESTIGATION OF MESOPLASMA IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 662 - +

[5] A METHOD FOR HEAT FLOW RESISTANCE MEASUREMENTS IN AVALANCHE DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 438 - &

[6] SECONDARY BREAKDOWN IN TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 439 - &

[7] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 35 - +

[8] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 108 (04): : 936 - 937

[9] A DISCUSSION OF SOME KNOWN PHYSICAL MODELS FOR SECOND BREAKDOWN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 731 - &

[10] WOLF HF, 1969, INT SERIES MONOGRAPH, V9

[1] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[2] EMISSION OF VISIBLE RADIATION FROM EXTENDED PLASMAS IN SILICON DIODES DURING SECOND BREAKDOWN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 479 - +

[3] MESOPLASMA BREAKDOWN IN SILICON JUNCTIONS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 500 - +

[4] PHYSICAL INVESTIGATION OF MESOPLASMA IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 662 - +

[5] A METHOD FOR HEAT FLOW RESISTANCE MEASUREMENTS IN AVALANCHE DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 438 - &

[6] SECONDARY BREAKDOWN IN TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 439 - &

[7] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 35 - +

[8] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 108 (04): : 936 - 937

[9] A DISCUSSION OF SOME KNOWN PHYSICAL MODELS FOR SECOND BREAKDOWN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 731 - &

[10] WOLF HF, 1969, INT SERIES MONOGRAPH, V9