A DISCUSSION OF SOME KNOWN PHYSICAL MODELS FOR SECOND BREAKDOWN

被引：6

作者：

WEITZSCH, F

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：731 / &

共 8 条

[1] MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS [J].

ENGLISH, AC .

[2] MESOPLASMA BREAKDOWN IN SILICON JUNCTIONS [J].

ENGLISH, AC ;

POWER, HM .

[3]

FORD GM, 1963, SOLID STATE DESIGN, V4, P29

[4] SECONDARY BREAKDOWN IN TRANSISTORS [J].

MELCHIOR, H ;

STRUTT, MJ .

[5]

MELCHIOR H, 1964, SCIENTIA ELECTRICA S, V10, P139

[6]

THORNTON CG, 1958, IRE T, VED 5, P6

[7]

WEITZSCH F, 1965, ARCH ELEKTR UBERTRAG, V19, P27

[8]

WEITZSCH F, 1962, AEU-ARCH ELEKTRON UB, V16, P1