AVALANCHE INJECTION AND SECOND BREAKDOWN IN TRANSISTORS

[1] ABRAMOWITZ M, 1964, HANDBOOK MATHEMATICA

[2] SOME NEW ASPECTS OF THERMAL INSTABILITY OF CURRENT DISTRIBUTION IN POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 630 - +

[3] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J]. SOLID-STATE ELECTRONICS, 1968, 11 (10) : 917 - +

[4] AVALANCHE INJECTION DIODES [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 54 - 69

[5] A PROBLEM IN RADIAL HEAT FLOW [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1951, 2 (AUG): : 233 - 237

[6] CURRENT MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 743 - +

[7] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P213

[8] ANALYSIS OF SECOND BREAKDOWN IN TRANSISTORS USING A SIMPLE MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 778 - +

[9] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[10] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[1] ABRAMOWITZ M, 1964, HANDBOOK MATHEMATICA

[2] SOME NEW ASPECTS OF THERMAL INSTABILITY OF CURRENT DISTRIBUTION IN POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 630 - +

[3] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J]. SOLID-STATE ELECTRONICS, 1968, 11 (10) : 917 - +

[4] AVALANCHE INJECTION DIODES [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 54 - 69

[5] A PROBLEM IN RADIAL HEAT FLOW [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1951, 2 (AUG): : 233 - 237

[6] CURRENT MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 743 - +

[7] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P213

[8] ANALYSIS OF SECOND BREAKDOWN IN TRANSISTORS USING A SIMPLE MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 778 - +

[9] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[10] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157