NOVEL APPROACHES TO PLASMA DEPOSITION OF AMORPHOUS SILICON-BASED MATERIALS

被引：13

作者：

BRUNO, G ^{[1
]}

CAPEZZUTO, P ^{[1
]}

CICALA, G ^{[1
]}

机构：

[1] UNIV BARI,DIPARTIMENTO CHIM,I-70126 BARI,ITALY

来源：

PURE AND APPLIED CHEMISTRY | 1992年 / 64卷 / 05期

关键词：

D O I：

10.1351/pac199264050725

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effect of dopant addition, frequency of the r.f. field, UV-light irradiation, and plasma modulation on the plasma deposition of amorphous silicon based materials (a-Si:H, a-Si:H,F, a-Si,Ge:H,F ) is examined. The discussion of the implications of the experimental results for current mechanistic models of these systems is stressed.

引用

页码：725 / 730

页数：6