COPPER DIFFUSIVITY IN SILICON - A REEXAMINATION

被引：39

作者：

MESLI, A ^{[1
]}

HEISER, T ^{[1
]}

MULHEIM, E ^{[1
]}

机构：

[1] UNIV STRASBOURG 1,DEPT PHYS,F-67070 STRASBOURG,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 25卷 / 2-3期

关键词：

D O I：

10.1016/0921-5107(94)90215-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent studies dealing with copper in silicon have shown large disparities in diffusivity data. We show that copper, as a positively charged diffusing species, is susceptible to many possible reactions. In particular, it strongly reacts with acceptors and oxygen. Moreover, a large distribution gradient of this impurity induces a local electric field, considerably enhancing its mobility. We show that even partial ignorance of these effects leads to the observed disparities. From our studies we determine the intrinsic diffusion coefficient of copper over the range 180-1200 K.

引用

页码：141 / 146

页数：6

共 17 条

[1] Distribution of ions in electrolytic solutions. [J].