ELECTROABSORPTION AVALANCHE PHOTODIODES

被引：31

作者：

STILLMAN, GE ^{[1
]}

WOLFE, CM ^{[1
]}

ROSSI, JA ^{[1
]}

DONNELLY, JP ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

关键词：

D O I：

10.1063/1.1655355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：671 / 673

页数：3

共 14 条

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[3] OPTICAL ABSORPTION IN ELECTRIC FIELD
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[4] FRANZ W, 1958, Z NATURFORSCHUNG A, V13, P494
[5] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
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LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &
[6] Keldysh L. V., 1958, SOV PHYS JETP, V34, P788
[7] GAAS SCHOTTKY BARRIER AVALANCHE PHOTODIODES
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WOLFE, CM
FOYT, AG
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 197 - +
[8] PENCHINA C, 1964, B AM PHYS SOC, V9, P714
[9] HIGH-POWER NARROW-LINEWIDTH OPERATION OF GAAS DIODE LASERS
ROSSI, JA
CHINN, SR
HECKSCHER, H
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (01) : 25 - 27
[10] OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE STUDIES OF THIN GAAS LAYERS IN GAAS-AL CHI GA1-CHI AS DOUBLE HETEROSTRUCTURES
SELL, DD
CASEY, HC
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 800 - 807