VARIATION OF ELECTRONIC-PROPERTIES AND EVIDENCE FOR A REVERSIBLE DEFECT INDUCED METAL TO SEMICONDUCTOR TRANSITION IN PBMO6S8 OBSERVED BY ION IRRADIATION AND SUBSEQUENT ANNEALING OF THIN-FILMS

被引：4

作者：

ADRIAN, G

ADRIAN, H

机构：

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1987年 / 67卷 / 01期

关键词：

D O I：

10.1007/BF01307310

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：75 / 87

页数：13

共 41 条

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