RECOMBINATION DYNAMICS IN PSEUDOMORPHIC AND PARTIALLY RELAXED IN0.23GA0.77AS/GAAS QUANTUM-WELLS

被引：15

作者：

GRUNDMANN, M ^{[1
]}

BIMBERG, D ^{[1
]}

FISCHERCOLBRIE, A ^{[1
]}

MILLER, JN ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.41.10120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A systematic investigation of the recombination dynamics of excess charge carriers in In0.23Ga0.77As/GaAs single quantum wells as a function of well width covering the range from the pseudomorphic to the partially relaxed regime reveals for the first time the impact of misfit dislocations on carrier decay times. At dislocation densities nL=5×105 m-1 the recombination changes its character from predominantly radiative (excitonic) to nonradiative. A diffusion model describes quantitatively the observations and full agreement is obtained with independent determination of the quantum efficiency. Excitonic, (e,A0), and (D0,A0) recombination times are determined. The intrinsic ambipolar diffusion length is observed to be 0.5 m, indicating a huge hole mobility of 1400 cm2/V s at 10 K. Time-resolved cathodoluminescence provides the experimental results. © 1990 The American Physical Society.

引用

页码：10120 / 10123

页数：4

共 24 条

[1] A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].