THE STAEBLER-WRONSKI EFFECT IN MICROCRYSTALLINE SILICON FILMS

被引：13

作者：

LIU, HN ^{[1
]}

XU, MD ^{[1
]}

机构：

[1] NANJING UNIV,INST SOLID STATE PHYS,NANJING,PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 09期

关键词：

Acknowledgements - The authors wish to thank Feng Xiao mei and Ma Yah dien for sample preparation; Jin Tong zheng for ESR measurement and He Yu liang for helpful discussion. This work was supported by a fund of the Chinese Academy of Science;

D O I：

10.1016/0038-1098(86)90227-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：601 / 603

页数：3

共 8 条

[1] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458
[2] INVESTIGATION INTO THE CONDUCTION MECHANISM OF CVD AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS
HE, YL
LIU, HN
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 831 - 834
[3] SOME NEW RESULTS ON TRANSPORT AND DENSITY OF STATE DISTRIBUTION IN GLOW-DISCHARGE MICROCRYSTALLINE SILICON
LECOMBER, PG
WILLEKE, G
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 795 - 798
[4] PHOTOINDUCED FREE-CARRIER ABSORPTION IN MICROCRYSTALLINE SILICON
LIU, HN
PFOST, D
TAUC, J
[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (11) : 987 - 990
[5] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON
STAEBLER, DL
WRONSKI, CR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3262 - 3268
[6] STAEBLER DL, 1977, APPL PHYS LETT, V31, P297
[7] STUTZMANN M, 1984, AIP CONF PR, V120, P213
[8] PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED A-SI-H
TANIELIAN, MH
GOODMAN, NB
FRITZSCHE, H
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 375 - 378

← 1 →