DISORDERED GAAS FILMS OBTAINED BY SPUTTERING

被引：1

作者：

CZAPLA, A

SZCZYRBOWSKI, J

LIEBSCHER, DP

BECHERER, DP

机构：

[1] BERGAKAD FREIBERG, SEKT PHYS, SILBERMANN STR 1, 92 FREIBERG, EAST GERMANY

[2] ACAD MINING & MET, INST MET, DEPT SOLID STATE PHYS, MICKIEWICZA 30, KRAKOW, POLAND

来源：

关键词：

D O I：

10.1016/0040-6090(74)90269-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：S19 / S22

页数：4

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FLORA, LP ;

SENTURIA, SD .

[2] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

[3]

KOLIESOW BA, 1974, FIZ TEKH POLUPROV, V8, P662

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&

[5]

PEKA GP, 1973, FIZ TEKH POLUPROV, V7, P2159

[6]

Willardson R. K., 1967, SEMICONDUCTORS SEMIM, V3

[7]

WILLIAMS EW, 1967, T METALL SOC AIME, V239, P387