THE SEEBECK EFFECT IN SILICON ICS

被引：46

作者：

VANHERWAARDEN, AW

机构：

[1] Delft Univ of Technology, Dep of, Electrical Engineering, Delft, Neth, Delft Univ of Technology, Dep of Electrical Engineering, Delft, Neth

来源：

SENSORS AND ACTUATORS | 1984年 / 6卷 / 04期

关键词：

INTEGRATED CIRCUITS - SEMICONDUCTING SILICON;

D O I：

10.1016/0250-6874(84)85020-9

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The Seebeck effect in silicon is investigted to evaluate its usefulness for an integrated temperature difference sensor. The theory of the Seebeck effect is briefly explained and some details of the integrated thermopile, the device exploiting the Seebeck effect, are discussed. The experimental results of the measurements are presented, and the maximum attainable sensitivity, which appears to be of the order of 5 to 50 mV/K for thermopiles with internal resistance of 2 k OMEGA to 200 k OMEGA , is calculated. It is concluded that the absence of offset, the high sensitivity and the wide operational temperature range make the thermopile a very valuable transducer.

引用

页码：245 / 254

页数：10

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