INSITU SELECTIVE-AREA EPITAXY OF A GAAS-BASED HETEROSTRUCTURE USING A GAAS OXIDE LAYER AS A MASK

被引：15

作者：

HIRATANI, Y ^{[1
]}

OHKI, Y ^{[1
]}

SASAKI, M ^{[1
]}

机构：

[1] OPTOELECTR TECHNOL RES LAB,TSUKUBA,IBARAKI 30026,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90715-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The in-situ selective-area epitaxy of InGaAs/GaAs was demonstrated by combining a GaAs oxide mask with metalorganic molecular beam epitaxy (MOMBE). All of the necessary processes for selective-area epitaxy were carried out in a MOMBE system without exposing the wafer to air. A mass spectrometric analysis of the decomposition of the source materials indicates that the surface-catalyzed decomposition of the source materials induces selective growth.

引用

页码：74 / 78

页数：5

共 5 条

[1]

AKITA K, 1990, P SOC PHOTO-OPT INS, V1392, P576

[2] ATOMIC-LAYER GROWTH OF GAAS BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY [J].

AOYAGI, Y ;

DOI, A ;

IWAI, S ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1460-1464

[3] SELECTIVE AREA EPITAXY OF GAAS USING GAAS OXIDE AS A MASK [J].

HIRATANI, Y ;

OHKI, Y ;

SUGIMOTO, Y ;

AKITA, K ;

TANEYA, M ;

HIDAKA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08) :L1360-L1362

[4] ANALYSIS OF GAAS MOMBE REACTIONS BY MASS-SPECTROMETRY [J].

OHKI, Y ;

HIRATANI, Y ;

YAMADA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (09) :L1486-L1488

[5]

TAKAHASHI T, 1990, 37TH SPRING M JAP SO, V1, P227

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