ANALYSIS OF GAAS MOMBE REACTIONS BY MASS-SPECTROMETRY

被引：29

作者：

OHKI, Y

HIRATANI, Y

YAMADA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 09期

关键词：

D O I：

10.1143/JJAP.28.L1486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1486 / L1488

页数：3

共 11 条

[1] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY [J].

CHIU, TH ;

TSANG, WT ;

CUNNINGHAM, JE .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2302-2307

[2] EFFECT OF EXPOSURE TO GROUP-III ALKYLS ON COMPOUND SEMICONDUCTOR SURFACES OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

ISHII, H ;

OHNO, H ;

MATSUZAKI, K ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :132-135

[3] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J].

KAMON, K ;

TAKAGISHI, S ;

MORI, H .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :73-76

[4] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KOBAYASHI, N ;

BENCHIMOL, JL ;

ALEXANDRE, F ;

GAO, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1907-1909

[5] DECOMPOSITION OF TRIMETHYLGALLIUM ON SI(100) - SPECTROSCOPIC IDENTIFICATION OF THE INTERMEDIATES [J].

LEE, F ;

BACKMAN, AL ;

LIN, R ;

GOW, TR ;

MASEL, RI .

SURFACE SCIENCE, 1989, 216 (1-2) :173-188

[6] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS [J].

PUTZ, N ;

HEINECKE, H ;

HEYEN, M ;

BALK, P ;

WEYERS, M ;

LUTH, H .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) :292-300

[7]

SQUIRE DW, 1986, MATER RES SOC S P, V54, P709

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE [J].

TOKUMITSU, E ;

KUDOU, Y ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3163-3165

[9] FROM CHEMICAL VAPOR EPITAXY TO CHEMICAL BEAM EPITAXY [J].

TSANG, WT .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :121-131

[10] PARAMETRIC STUDIES OF GAAS GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

VODJDANI, N ;

LEMARCHAND, A ;

PARADAN, H .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :339-349

← 1 2 →