FROM CHEMICAL VAPOR EPITAXY TO CHEMICAL BEAM EPITAXY

被引：51

作者：

TSANG, WT

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90364-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：121 / 131

页数：11

相关论文

共 39 条

[1] HIGH-PERFORMANCE GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS GROWN BY CHEMICAL BEAM EPITAXY
ANTREASYAN, A
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 322 - 324
[2] INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH 70 GHZ GAIN-BANDWIDTH PRODUCT
CAMPBELL, JC
TSANG, WT
QUA, GJ
BOWERS, JE
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1454 - 1456
[3] INP/IN0.53GA0.47AS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY
CAMPBELL, JC
TSANG, WT
QUA, GJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 171 - 173
[4] HIGH-SPEED INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY
CAMPBELL, JC
TSANG, WT
QUA, GJ
JOHNSON, BC
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (03) : 496 - 500
[5] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY
CHIU, TH
TSANG, WT
CUNNINGHAM, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2302 - 2307
[6] FAR TD, 1950, 8 TENN VALL AUTH CHE
[7] SPECTRAL DEPENDENCE OF PROPAGATION LOSS IN INP/INGAASP ANTIRESONANT REFLECTING OPTICAL WAVE-GUIDES GROWN BY CHEMICAL BEAM EPITAXY
KOCH, TL
TSANG, WT
CORVINI, PJ
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 307 - 309
[8] WAVELENGTH SELECTIVE INTERLAYER DIRECTIONALLY GRATING-COUPLED INP/INGAASP WAVE-GUIDE PHOTODETECTION
KOCH, TL
CORVINI, PJ
TSANG, WT
KOREN, U
MILLER, BI
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1060 - 1062
[9] KOCH TL, IN PRESS ELECTRON LE
[10] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 179 - 184

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