HIGH-PERFORMANCE GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS GROWN BY CHEMICAL BEAM EPITAXY

被引：8

作者：

ANTREASYAN, A ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 06期

关键词：

D O I：

10.1063/1.97618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：322 / 324

页数：3

共 11 条

[1] GA0.47IN0.53 AS ULTRAHIGH GAIN, HIGH-SENSITIVITY PHOTOCONDUCTORS GROWN BY CHLORIDE VAPOR-PHASE EPITAXY
ANTREASYAN, A
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MATTERA, VD
OLSSON, NA
TEMKIN, H
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1535 - 1537
[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703
[3] HIGH-SENSITIVITY GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS PREPARED BY VAPOR-PHASE EPITAXY
CHEN, CY
KASPER, BL
COX, HM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1142 - 1144
[4] Chen Y., UNPUB
[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[6] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 128 - 135
[7] THE SENSITIVITY OF PHOTOCONDUCTOR RECEIVERS FOR LONG-WAVELENGTH OPTICAL COMMUNICATIONS
FORREST, SR
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) : 347 - 360
[8] NEW GAAS, GAP, AND GAASX P1-X VACUUM DEPOSITION TECHNIQUE USING ARSINE AND PHOSPHINE GAS
MORRIS, FJ
FUKUI, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (02): : 506 - 510
[9] SELECTIVE AREA GROWTH OF GAAS AND IN0.53GA0.47AS EPILAYER STRUCTURES BY CHEMICAL BEAM EPITAXY USING SILICON SHADOW MASKS - A DEMONSTRATION OF THE BEAM NATURE
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 742 - 744
[10] CHEMICAL BEAM EPITAXY OF INGAAS
TSANG, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1415 - 1418

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