SELECTIVE AREA GROWTH OF GAAS AND IN0.53GA0.47AS EPILAYER STRUCTURES BY CHEMICAL BEAM EPITAXY USING SILICON SHADOW MASKS - A DEMONSTRATION OF THE BEAM NATURE

被引：19

作者：

TSANG, WT

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来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 08期

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D O I：

10.1063/1.95911

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：742 / 744

页数：3

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