EFFECT OF EXPOSURE TO GROUP-III ALKYLS ON COMPOUND SEMICONDUCTOR SURFACES OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引:29
作者
ISHII, H
OHNO, H
MATSUZAKI, K
HASEGAWA, H
机构
关键词
D O I
10.1016/0022-0248(89)90365-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:132 / 135
页数:4
相关论文
共 10 条
  • [1] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY
    DENBAARS, SP
    BEYLER, CA
    HARIZ, A
    DAPKUS, PD
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1530 - 1532
  • [2] DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795
  • [3] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY
    KATNANI, AD
    CHIARADIA, P
    SANG, HW
    ZURCHER, P
    BAUER, RS
    [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2146 - 2156
  • [4] GAAS GROWTH BY ATOMIC LAYER EPITAXY USING DIETHYLGALLIUMCHLORIDE
    MORI, K
    YOSHIDA, M
    USUI, A
    TERAO, H
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (01) : 27 - 29
  • [5] GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES
    NISHIZAWA, J
    KURABAYASHI, T
    ABE, H
    SAKURAI, N
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1572 - 1577
  • [6] NISHIZAWA J, 1985, J ELECTROCHEM SOC, V132, P1198
  • [7] OHNO H, UNPUB
  • [8] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY
    PASHLEY, MD
    HABERERN, KW
    FRIDAY, W
    WOODALL, JM
    KIRCHNER, PD
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2176 - 2179
  • [9] TISCHLER MA, 1987, I PHYS C SER, V83, P135
  • [10] WATANABE H, 1987, I PHYS C SER, V83, P1