LEDGE GROWTH, STRAIN ACCOMMODATION, AND STACKING-FAULT FORMATION DURING SILICON OXIDATION

被引：19

作者：

HIRTH, JP ^{[1
]}

TILLER, WA ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：947 / 952

页数：6

共 26 条

[1]

Bravman J. C., COMMUNICATION

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[4] VISCOUS-FLOW OF THERMAL SIO2 [J].

EERNISSE, EP .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293

[5] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J].

EERNISSE, EP ;

DERBENWICK, GF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1534-1539

[6] INTERFACIAL STRUCTURE OF AL-CUAL2 EUTECTIC COMPOSITES [J].

GARMONG, G ;

RHODES, CG .

ACTA METALLURGICA, 1974, 22 (11) :1373-1382

[7] FLOW VIA DISLOCATIONS IN IDEAL GLASSES [J].

GILMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :675-679

[8]

GOSELE U, 1981, SEMICONDUCTOR SILICO, P766

[9]

Hirth J. P., 1982, THEORY DISLOCATIONS, V2nd, P837

[10]

Hirth J. P., 1982, THEORY DISLOCATIONS, P319

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