THEORY OF THE EXCITON BOUND TO AN ISOELECTRONIC TRAP IN GAP

被引：22

作者：

MASSELINK, WT ^{[1
]}

CHANG, YC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW LETTERS | 1983年 / 51卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.51.509

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：509 / 512

页数：4

共 15 条

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[8] ISOELECTRONIC DONORS AND ACCEPTORS [J].

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[9] INDIRECT EXCITON FINE-STRUCTURE IN GAP AND THE EFFECT OF UNIAXIAL STRESS [J].

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[10]

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