INDIRECT EXCITON FINE-STRUCTURE IN GAP AND THE EFFECT OF UNIAXIAL STRESS

被引：78

作者：

HUMPHREYS, RG ^{[1
]}

ROSSLER, U ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.18.5590

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5590 / 5605

页数：16

共 41 条

[1] INDIRECT EXCITON DISPERSION AND LINE-SHAPE IN GE
ALTARELLI, M
LIPARI, NO
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (11) : 619 - 622
[2] CAMEL BACK EXCITONS IN GAP
ALTARELLI, M
SABATINI, RA
LIPARI, NO
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 1101 - 1104
[3] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 439 - +
[4] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM
BALSLEV, I
[J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
[5] BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101
[6] BIMBERG D, UNPUBLISHED
[7] BIR GL, 1962, SOV PHYS-SOL STATE, V3, P2221
[8] ELASTIC-CONSTANTS AND LATTICE ANHARMONICITY OF GASB AND GAP FROM ULTRASONIC-VELOCITY MEASUREMENTS BETWEEN 4.2 AND 300 K
BOYLE, WF
SLADEK, RJ
[J]. PHYSICAL REVIEW B, 1975, 11 (08): : 2933 - 2940
[9] DETERMINATION OF MASS-ANISOTROPY EXCITON SPLITTING IN SILICON
CAPIZZI, M
MERLE, JC
FIORINI, P
FROVA, A
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (07) : 451 - 455
[10] FINE-STRUCTURE OF INDIRECT EXCITON IN GAP
CAPIZZI, M
EVANGELISTI, F
FIORINI, P
FROVA, A
PATELLA, F
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (12) : 801 - 803