ELECTRONIC-ENERGY STRUCTURE OF AMORPHOUS SILICON

被引：49

作者：

CHING, WY ^{[1
]}

LIN, CC ^{[1
]}

HUBER, DL ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.14.620

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：620 / 631

页数：12

共 48 条

[1] BAND-STRUCTURE OF SI III AND GE III
ALBEN, R
WEAIRE, D
THORPE, MF
GOLDSTEIN, S
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 53 (02): : 545 - +
[2] COMPUTER RESTRUCTURING OF CONTINUOUS RANDOM TETRAHEDRAL NETWORKS
BEEMAN, D
BOBBS, BL
[J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1399 - 1403
[3] EXTREME ULTRAVIOLET TRANSMISSION OF CRYSTALLINE AND AMORPHOUS SILICON
BROWN, FC
RUSTGI, OP
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (08) : 497 - &
[4] SELF-CONSISTENT CALCULATION OF ENERGY-BANDS IN FERROMAGNETIC NICKEL
CALLAWAY, J
WANG, CS
[J]. PHYSICAL REVIEW B, 1973, 7 (03): : 1096 - 1103
[5] CALLAWAY J, 1974, QUANTUM THEORY SOLID, P188
[6] ENERGY BAND STRUCTURE OF LITHIUM FLUORIDE CRYSTALS BY METHOD OF TIGHT BINDING
CHANEY, RC
LAFON, EE
LIN, CC
[J]. PHYSICAL REVIEW B, 1971, 4 (08): : 2734 - &
[7] APPLICATION OF GAUSSIAN-TYPE ORBITALS FOR CALCULATING ENERGY BAND STRUCTURES OF SOLIDS BY METHOD OF TIGHT BINDING
CHANEY, RC
TUNG, TK
LIN, CC
LAFON, EE
[J]. JOURNAL OF CHEMICAL PHYSICS, 1970, 52 (01) : 361 - &
[8] APPLICATION OF METHOD OF TIGHT BINDING TO CALCULATION OF ENERGY BAND STRUCTURES OF DIAMOND, SILICON, AND SODIUM CRYSTALS
CHANEY, RC
LIN, CC
LAFON, EE
[J]. PHYSICAL REVIEW B, 1971, 3 (02): : 459 - &
[9] INTERBAND OPTICAL CONDUCTIVITY OF POTASSIUM
CHING, WY
CALLAWAY, J
[J]. PHYSICAL REVIEW LETTERS, 1973, 30 (10) : 441 - 443
[10] ORTHOGONALIZED LINEAR COMBINATIONS OF ATOMIC ORBITALS - APPLICATION TO CALCULATION OF ENERGY-BANDS OF SIIII
CHING, WY
LIN, CC
[J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5536 - 5544

← 1 2 3 4 5 →