VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS

被引:110
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TANIGUCHI, M
IKOMA, T
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10.1063/1.331925
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O59 [应用物理学];
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页码:6448 / 6451
页数:4
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共 10 条
  • [1] AKAI S, 1981, I PHYS C SER LONDON, V63, P13
  • [2] FUKUDA T, 1983, UNPUB POST C M INTEG
  • [3] HOBGOOD HM, 1982, SEMIINSULATING 3 5 M, P28
  • [4] HOLMES DE, 1983, APPL PHYS LETT, V42, P412
  • [5] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
    LAGOWSKI, J
    GATOS, HC
    PARSEY, JM
    WADA, K
    KAMINSKA, M
    WALUKIEWICZ, W
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344
  • [6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
    LANG, DV
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
  • [7] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
    MARTIN, GM
    MITONNEAU, A
    MIRCEA, A
    [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
  • [8] NOGE H, UNPUB JPN J APPL PHY
  • [9] TANIGUCHI M, 1982, SEMIINSULATING 3 5 M, P283
  • [10] TANIGUCHI M, 1982, I PHYS C SER, V65, P65