IMPROVED MICROWAVE PERFORMANCE IN TRANSISTORS BASED ON REAL SPACE ELECTRON-TRANSFER

被引：20

作者：

HUESCHEN, MR

MOLL, N

FISCHERCOLBRIE, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.103700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental results on an improved type of transistor based on real space electron transfer are presented. Microwave measurements through 25 GHz show an extrapolated fT of 60 GHz and a measured fMAX of 18 GHz. These gain-bandwidth products are approximately twice as high as any previously reported for this relatively new class of device. This improvement in performance results from a novel device design which incorporates a doped, pseudomorphic InGaAs channel, a GaAs collector drift region, and a collector-up structure.

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页码：386 / 388

页数：3

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