TEMPERATURE-DEPENDENCE OF K(T) IN PIEZOELECTRIC CERAMICS NEAR F-AF PHASE-BOUNDARY

被引：3

作者：

SUN, DZ

DONG, XL

WANG, YL

机构：

[1] Shanghai Institute of Ceramics, Academia Sinica, Shanghai

来源：

FERROELECTRICS LETTERS SECTION | 1993年 / 15卷 / 5-6期

关键词：

D O I：

10.1080/07315179308204248

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependence of the electromechanical coupling factor K(t) in PLZT and PSZT ceramics with the composition situated near the ferroelectric(F) and antiferroelectric(AF) phase boundary is investigated. The results show that the value of K(t) is connected with the F-AF phase boundary. The K(t) in PLZT ceramics drops down with the increase of temperature which makes the measured site depart from the F-AF phase boundary. The K(t) in PSZT ceramics increases with the increase of temperature which makes the measured site close to the F-AF phase boundary. It is possible to develop the piezoelectric ceramic materials with good temperature stability by means of the choice of composition with the proper F-AF phase boundary.

引用

页码：121 / 126

页数：6

共 12 条

[1]

DAI X, 1990, FERROELECTRICS, V109, P253, DOI 10.1080/00150199008211422

[2] STUDY ON THE ORDER OF THE FR(LT)-FR(HT) PHASE-TRANSITION OF PZT CERAMICS [J].