REVERSIBLE CHANGES IN TRANSISTOR CHARACTERISTICS CAUSED BY SCANNING ELECTRON MICROSCOPE EXAMINATION

被引：21

作者：

GREEN, D

SANDOR, JE

OKEEFFE, TW

MATTA, RK

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 6卷 / 01期

关键词：

D O I：

10.1063/1.1754122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3 / &

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[1] EVALUATION OF PASSIVATED INTEGRATED CIRCUITS USING THE SCANNING ELECTRON MICROSCOPE
EVERHART, TE
WELLS, OC
MATTA, RK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : 929 - 936
[2] MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN SI P-N JUNCTION DIODES BY USE OF ELECTRON BEAMS
LANDER, JJ
SCHREIBER, H
BUCK, TM
MATHEWS, JR
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (11) : 206 - 207
[3] SURFACE EFFECTS OF RADIATION ON TRANSISTORS
PECK, DS
BROWN, WL
BLAIR, RR
SMITS, FM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1963, 42 (01): : 95 - +
[4] SACK EA, PRIVATE COMMUNICATIO