GROWTH AND PROPERTIES OF VACUUM-DEPOSITED FILMS OF ALSB, ALAS AND ALP

被引：17

作者：

FRANCOMBE, MH

NOREIKA, AJ

ZEITMAN, SA

JOHNSON, JE

机构：

[1] WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235

[2] WESTINGHOUSE ELECT CO,SEMICONDUCTOR DIV,YOUNGWOOD,PA 15697

来源：

关键词：

D O I：

10.1016/0040-6090(76)90309-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：259 / 262

页数：4

共 7 条

[1]

CARDONA M, 1967, SEMICONDUCTORS SEMIM, V3

[2]

CHO AY, 1970, GALLIUM ARSENIDE REL, P18

DAVID, JP ;

CAPELLA, L ;

LAUDE, L ;

MARTINUZZI, S .

REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (03) :172-+

[4]

GUNTHER KG, 1966, USE THIN FILMS PHYSI, P213

[5] ALUMINUM ANTIMONIDE THIN FILMS BY COEVAPORATION OF ELEMENTS [J].

JOHNSON, JE .

[6] CONDUCTION BAND MINIMA IN ALAS AND ALSB [J].

MEAD, CA ;

SPITZER, WC .

[7] VACUUM DEPOSITION OF AIN ACOUSTIC TRANSDUCERS [J].

WAUK, MT ;

WINSLOW, DK .