GROWTH OF INSULATING CRYSTALS

被引:9
作者
BRICE, JC [1 ]
机构
[1] MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
关键词
D O I
10.1088/0034-4885/40/5/002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:567 / 602
页数:36
相关论文
共 145 条
[91]  
LOBACHEV AN, 1977, CRYSTAL GROWTH MATER
[92]  
Loiacono G. M., 1975, Acta Electronica, V18, P241
[93]  
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2
[94]   DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280
[95]   CHEMICAL VAPOR DEPOSITION OF EPITAXIAL YIG ON YAG AND EPITAXIAL GDIG ON YAG [J].
MEE, JE ;
ARCHER, JL ;
MEADE, RH ;
HAMILTON, TN .
APPLIED PHYSICS LETTERS, 1967, 10 (10) :289-&
[96]  
MILLETT EJ, 1967, CRYSTAL GROWTH, P673
[97]  
Moissan H., 1892, CR HEBD ACAD SCI, V115, P1031
[98]  
MOISSAN H, 1892, CR HEBD ACAD SCI, V115, P1034
[99]   A method of growing large perfect crystals from solution [J].
Moore, RW .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1919, 41 :1060-1066
[100]  
Mullin J. W., 1961, CRYSTALLIZATION