NOVEL SELF-ALIGNED GATE ALXGA1-XAS/N-GAAS SUPERLATTICE MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：7

作者：

ABROKWAH, JK

CIRILLO, NC

ARCH, D

DANIELS, RR

HIBBSBRENNER, M

FRAASCH, A

VOLD, P

JOSLYN, P

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：615 / 617

页数：3

共 17 条

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[3] SELF-ALIGNED MODULATION-DOPED (AL,GA)AS/GAAS FIELD-EFFECT TRANSISTORS [J].

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[9] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J].

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[10]

LEE CP, 1983, 41ST P ANN DEV RES C

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