EXPERIMENTAL-EVIDENCE FOR CHARGE-TRANSFER EXCITATION OF YB IN INP

被引：9

作者：

BOHNERT, G

WEBER, J

SCHOLZ, F

HANGLEITER, A

机构：

[1] 4. Physikalisches Institut, Universität Stuttgart, D-7000 Stuttgart 80

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental evidence for a charge-transfer excitation of Yb in InP on cubic lattice site Yb(In) is obtained from time-resolved photoluminescence spectra. The results strongly indicate that the Yb related electronic level E(C)-30 meV, up to now only considered to be an electron trap, is indeed the Yb3+/Yb2+ acceptor level. We conclude that this level plays the crucial role for effective excitation of the 4f emission of the Yb3+ ion in InP. The thermal quenching in photoluminescence and for the decay time is ascribed to hole emission from the excited Yb3+ ion into the valence band.

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页码：382 / 384

页数：3

相关论文

共 19 条

[1] ZEEMAN ANALYSIS OF THE YTTERBIUM LUMINESCENCE IN INDIUM-PHOSPHIDE [J].

ASZODI, G ;

WEBER, J ;

UIHLEIN, C ;

PULIN, L ;

ENNEN, H ;

KAUFMANN, U ;

SCHNEIDER, J ;

WINDSCHEIF, J .

PHYSICAL REVIEW B, 1985, 31 (12) :7767-7771

[2] DESCRIPTION OF THE TRENDS FOR RARE-EARTH IMPURITIES IN SEMICONDUCTORS [J].

DELERUE, C ;

LANNOO, M .

PHYSICAL REVIEW LETTERS, 1991, 67 (21) :3006-3009

[3]

KASATKIN VA, 1982, SOV PHYS SEMICOND+, V16, P106

[4] TIME RESOLVED PHOTOLUMINESCENCE FROM YB-3+ CENTERS IN INP-YB [J].

KLEIN, PB .

SOLID STATE COMMUNICATIONS, 1988, 65 (10) :1097-1101

[5] ON THE LOCATION OF YTTERBIUM IN GAP AND GAAS LATTICES [J].

KOZANECKI, A ;

GROETZSCHEL, R .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) :3315-3317

[6] EXCITATION AND QUENCHING OF YB INTRA-4F-SHELL LUMINESCENCE IN INP0.93AS0.07 [J].

KOZANECKI, A ;

KARPINSKA, K ;

KALINSKI, Z .

APPLIED PHYSICS LETTERS, 1993, 62 (01) :84-86

[7] ELECTRICAL-ACTIVITY OF YB IN INP [J].

LAMBERT, B ;

TOUDIC, Y ;

GRANDPIERRE, G ;

RUPERT, A ;

LECORRE, A .

ELECTRONICS LETTERS, 1988, 24 (23) :1446-1447

[8] ELECTRICAL AND OPTICAL-PROPERTIES OF RARE-EARTH DOPANTS (YB, ER) IN N-TYPE III-V (INP) SEMICONDUCTORS [J].

LAMBERT, B ;

LECORRE, A ;

TOUDIC, Y ;

LHOMER, C ;

GRANDPIERRE, G ;

GAUNEAU, M .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (02) :479-483

[9] EXCITATION MECHANISMS OF RARE-EARTH (YB) LUMINESCENCE IN III-V SEMICONDUCTORS (INP) [J].

LHOMER, C ;

LAMBERT, B ;

TOUDIC, Y ;

LECORRE, A ;

GAUNEAU, M ;

CLEROT, F ;

SERMAGE, B .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (09) :916-923

[10]

MASTEROV VF, 1990, SOV PHYS SEMICOND+, V24, P383