SINGLE SIDE-BAND IMAGING IN HIGH-RESOLUTION ELECTRON-MICROSCOPY

More then 20 years ago, Hanssen and Morgenstern [1] described the case of single sideband imaging in electron microscopy. Single sideband imaging allows to correct artifacts in the imaging process due to spherical aberration and defocus and to reconstruct the electron wave function at the exit surface of the sample from experimental micrographs. In the present work, optimized imaging parameters allowed us to obtain new experimental results, thus confirming the resolution limit of single sideband imaging (0.13 nm) to be close to the information limit of a JEOL 4000EX microscope. Furthermore, the reconstructed exit surface wave functions were throuroughly checked by using them to calculate a focus series, which was compared with an experimental focus series.