SELECTIVE EPITAXIAL-GROWTH OF ALGAAS BY ATMOSPHERIC-PRESSURE - MOCVD USING DIETHYLGALLIUMCHLORIDE AND DIETHYLALUMINIUMCHLORIDE

被引:24
作者
YAMAGUCHI, K
OKAMOTO, K
机构
[1] University of Electro-Communications, Chofu, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 08期
关键词
AlGaAs; Si02; film; Diethylaluminiumchloride; Diethylgalliumchloride; Metalorganic chemical vapor deposition; Polycrystal; Selective epitaxial growth;
D O I
10.1143/JJAP.29.1408
中图分类号
O59 [应用物理学];
学科分类号
摘要
Selective epitaxy of AlGaAs was carried out by atmospheric pressure-MOCVD using DEGaCl and DEAlCl. In the case of Al composition of 0 and 0.16, polycrystal deposition on SiO2 masks was drastically suppressed at the growth rate below 0.020 µm/min. Even, in case of high Al composition of 0.43 and 0.73, a high selectivity of the deposition could be realized as long as the growth rate was kept below 0.017 µm/min. The high selectivity of the deposition can be explained by reevaporation of the reactant species in the form of GaCl and AlCl on the masks. Extremely flat surfaces were also obtained for GaAs selective epilayers grown below substrate temperature of 750°C and growth rate of 0.02 µm/min. In case of Al0.16Ga0.84As selective growth, ridge growth appeared in spite of growth conditions of 0.02 µm/min and 730°C. It is proposed that the ridge growth is related with vapor-phase diffusion from mask areas. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码:1408 / 1414
页数:7
相关论文
共 15 条
[1]   SELECTIVE AREA GROWTH OF INP INGAAS MULTIPLE QUANTUM WELL LASER STRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
ANDREWS, DA ;
REJMANGREENE, MAZ ;
WAKEFIELD, B ;
DAVIES, GJ .
APPLIED PHYSICS LETTERS, 1988, 53 (02) :97-98
[2]   NARROW TWO-DIMENSIONAL ELECTRON-GAS CHANNELS IN GAAS/AIGAAS SIDEWALL INTERFACES BY SELECTIVE GROWTH [J].
ASAI, H ;
YAMADA, S ;
FUKUI, T .
APPLIED PHYSICS LETTERS, 1987, 51 (19) :1518-1530
[3]   SELECTIVE MOCVD EPITAXY FOR OPTOELECTRONIC DEVICES [J].
AZOULAY, R ;
BOUADMA, N ;
BOULEY, JC ;
DUGRAND, L .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :229-234
[5]   LOW-LOSS WAVEGUIDES GROWN ON GAAS USING LOCALIZED VAPOR-PHASE EPITAXY [J].
ERMAN, M ;
VODJDANI, N ;
THEETEN, JB ;
CABANIE, JP .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :894-895
[6]  
GHOSH C, 1984, APPL PHYS LETT, V45, P1228
[7]   SELECTIVE EMBEDDED GROWTH OF ALXGA1-XAS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
KAMON, K ;
TAKAGISHI, S ;
MORI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L10-L12
[8]   SELECTIVE EPITAXY IN THE CONVENTIONAL METALORGANIC VAPOR-PHASE EPITAXY OF GAAS [J].
KUECH, TF ;
TISCHLER, MA ;
POTEMSKI, R .
APPLIED PHYSICS LETTERS, 1989, 54 (10) :910-912
[9]   SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS PLANAR TECHNOLOGY [J].
NAKAI, K ;
OZEKI, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :200-205
[10]  
NAKAYAMA Y, 1977, FUJITSU SCI TECH J, V13, P53