SELECTIVE EMBEDDED GROWTH OF ALXGA1-XAS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

Selective embedded growth of Al//xGa//1// minus //xAs (x less than equivalent to 0. 35) in grooves of patterned substrates has been achieved for the first time by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Epitaxial Al//xGa//1// minus //xAs layers are embedded only in chemically etched grooves, while no polycrystalline deposition occurs on the masked area. The layers grown in grooves with the reverse-mesa cross sections, formed in the (110) direction, are uniform in thickness and show flat-smooth surfaces throughout. These results indicate that LP-OMPVE is a very promising technique for monolithic device integration.