SELECTIVE MOCVD GROWTH OF GAALAS ON PARTLY MASKED SUBSTRATES AND ITS APPLICATION TO OPTOELECTRONIC DEVICES

被引：41

作者：

TAKAHASHI, Y ^{[1
]}

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90418-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：206 / 213

页数：8

相关论文

共 10 条

[1] AZOULAY A, 1981, J CRYSTAL GROWTH, V55, P229
[2] SELF-ALIGNED GAAS-GAALAS SEMICONDUCTOR-LASER WITH LATERAL SPATIAL VARIATION IN THICKNESS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION
FEKETE, D
BURNHAM, RD
SCIFRES, DR
STREIFER, W
YINGLING, RD
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 607 - 609
[3] LATERAL EPITAXIAL OVERGROWTH OF GAAS BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
GALE, RP
MCCLELLAND, RW
FAN, JCC
BOZLER, CO
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 545 - 547
[4] SELECTIVE EPITAXIAL DEPOSITION OF SILICON
JOYCE, BD
BALDREY, JA
[J]. NATURE, 1962, 195 (4840) : 485 - &
[5] MANASEVIT HM, 1971, J ELECTROCHEM SOC, V118, P6471
[6] A TECHNIQUE FOR PRODUCING EPITAXIAL-FILMS ON REUSEABLE SUBSTRATES
MCCLELLAND, RW
BOZLER, CO
FAN, JCC
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 560 - 562
[7] SELECTIVE GROWTH OF EPITAXIAL SILICON AND GALLIUM ARSENIDE
RAICHOUDHURY, P
SCHRODER, DK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 107 - +
[8] SAKAI S, 1982, 7TH INT C CRYST GROW
[9] ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS
STRINGFELLOW, GB
HALL, HT
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 201 - 226
[10] ELLIPSOMETRIC STUDIES ON SPUTTER-DAMAGED LAYER IN N-INP
TAKAHASHI, Y
SAKAI, S
UMENO, M
HATTORI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (12): : 1689 - 1692