ELLIPSOMETRIC STUDIES ON SPUTTER-DAMAGED LAYER IN N-INP

被引：8

作者：

TAKAHASHI, Y ^{[1
]}

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

HATTORI, S ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 12期

关键词：

D O I：

10.1143/JJAP.21.1689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1689 / 1692

页数：4

共 9 条

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01): : 42 - 46
[7] INGAASP-INP PHOTO-DIODES ANTI-REFLECTIVELY COATED WITH INP NATIVE OXIDE
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (10) : 1077 - 1079
[8] TAMURA M, 1971, J JPN SOC APPL PHY S, V40, P9
[9] SURFACE DAMAGE IN INP INDUCED DURING SIO2 DEPOSITION BY RF SPUTTERING
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (06) : 1191 - 1192