SURFACE DAMAGE IN INP INDUCED DURING SIO2 DEPOSITION BY RF SPUTTERING

[1] DEPOSITION TECHNIQUES FOR DIELECTRIC FILMS ON SEMICONDUCTOR-DEVICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1053 - 1063

[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991

[3] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420

[4] PROTON-BOMBARDMENT IN INP [J]. SOLID-STATE ELECTRONICS, 1977, 20 (08) : 727 - 730

[5] EFFECT OF HEAT-TREATMENT OF GAAS ENCAPSULATED BY SIO-2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 767 - 768

[6] Wilmsen C. W., 1975, Critical Reviews in Solid State Sciences, V5, P313, DOI 10.1080/10408437508243489

[1] DEPOSITION TECHNIQUES FOR DIELECTRIC FILMS ON SEMICONDUCTOR-DEVICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1053 - 1063

[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991

[3] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420

[4] PROTON-BOMBARDMENT IN INP [J]. SOLID-STATE ELECTRONICS, 1977, 20 (08) : 727 - 730

[5] EFFECT OF HEAT-TREATMENT OF GAAS ENCAPSULATED BY SIO-2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 767 - 768

[6] Wilmsen C. W., 1975, Critical Reviews in Solid State Sciences, V5, P313, DOI 10.1080/10408437508243489