ELLIPSOMETRIC MEASUREMENT OF DAMAGE DEPTH PROFILES FOR ION-BEAM PROCESSED SI SURFACE-LAYER

被引：5

作者：

OHIRA, F

ITAKURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 01期

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D O I：

10.1143/JJAP.21.42

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：42 / 46

页数：5

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共 23 条

[1] DETERMINATION OF COMPLEX REFRACTIVE-INDEX PROFILES IN P+31 ION-IMPLANTED SILICON BY ELLIPSOMETRY
ADAMS, JR
BASHARA, NM
[J]. SURFACE SCIENCE, 1975, 49 (02) : 441 - 458
[2] DEPTH DISTRIBUTIONS OF DEFECTS AND IMPURITIES IN 100-KEV B+ ION-IMPLANTED SILICON
AKASAKA, Y
HORIE, K
YONEDA, K
SAKURAI, T
NISHI, H
KAWABE, S
TOHI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 220 - 224
[3] ELLIPSOMETRIC ANALYSIS OF REFRACTIVE-INDEX PROFILES PRODUCED BY ION-IMPLANTATION IN SILICA GLASS
BAYLY, AR
TOWNSEND, PD
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (09) : 1115 - 1128
[4] BUSEN KM, 1966, T METALL SOC AIME, V236, P306
[5] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
CROWDER, BL
TITLE, RS
BRODSKY, MH
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &
[6] POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON
DAVIES, DE
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (07) : 227 - &
[7] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +
[8] ELLIPSOMETRIC STUDY OF 400 EV ION DAMAGE IN SILICON
IBRAHIM, MM
BASHARA, NM
[J]. SURFACE SCIENCE, 1972, 30 (03) : 632 - &
[9] KERN W, 1970, RCA REV, V31, P187
[10] KISHINO S, 1973, J JPN SOC APPL PHY S, V42, P118