DETERMINATION OF COMPLEX REFRACTIVE-INDEX PROFILES IN P+31 ION-IMPLANTED SILICON BY ELLIPSOMETRY

被引：35

作者：

ADAMS, JR ^{[1
]}

BASHARA, NM ^{[1
]}

机构：

[1] UNIV NEBRASKA, COLL ENGN, ELECT MAT LAB, LINCOLN, NE 68508 USA

来源：

SURFACE SCIENCE | 1975年 / 49卷 / 02期

关键词：

D O I：

10.1016/0039-6028(75)90363-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：441 / 458

页数：18

相关论文

共 46 条

[1] SIO2 THICKNESSES DETERMINATION BY REFLECTION ELLIPSOMETRY - SUBSTRATE EFFECTS
ADAMS, JR
BASHARA, NM
[J]. SURFACE SCIENCE, 1975, 47 (02) : 655 - 660
[2] DEPTH DISTRIBUTIONS OF DEFECTS AND IMPURITIES IN 100-KEV B+ ION-IMPLANTED SILICON
AKASAKA, Y
HORIE, K
YONEDA, K
SAKURAI, T
NISHI, H
KAWABE, S
TOHI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 220 - 224
[3] UNIFIED ANALYSIS OF ELLIPSOMETRY ERRORS DUE TO IMPERFECT COMPONENTS, CELL-WINDOW BIREFRINGENCE, AND INCORRECT AZIMUTH ANGLES
AZZAM, RMA
BASHARA, NM
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1971, 61 (05) : 600 - &
[4] CALIBRATION OF ELLIPSOMETER DIVIDED CIRCLES
AZZAM, RMA
BASHARA, NM
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1971, 61 (08) : 1118 - &
[5] BASHARA NM, 1972, PHYSICAL METHODS 3C, V1, P453
[6] ELLIPSOMETRIC ANALYSIS OF REFRACTIVE-INDEX PROFILES PRODUCED BY ION-IMPLANTATION IN SILICA GLASS
BAYLY, AR
TOWNSEND, PD
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (09) : 1115 - 1128
[7] BILENKO DI, 1972, SOV PHYS SEMICOND+, V5, P1247
[8] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048
[9] ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON
BROWER, KL
BEEZHOLD, W
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3499 - &
[10] BUNSEN KM, 1966, T METALL SOC AIME, V236, P306

← 1 2 3 4 5 →